Mmantsae Diale

Mmantsae Diale
Haihuwa	Pretoria, South Africa
Matakin ilimi	PhD degree ,the University of Pretoria MSc in Physics from the Medical University of Southern Africa (SMU)
Aiki	Professor
Lamban girma	National Science and Technology Forum (NSTF) prize in 2018

Mmantsae Diale Farfesa ne ɗan Afirka ta Kudu a fannin ilmin lissafi (Physics) a Jami’ar Pretoria, mai bincike, kuma mai riƙe da kujerar bincike ta Afirka ta Kudu (SARCHI) a fannin tsabtace makamashi da makamashi mai dorewa (clean and green energy). . Binciken da ta yi ya mayar da hankali ne akan hanyoyin jiki da sunadarai don sarrafa kayan lantarki da na gani na kayan. . Mmantsae Diale ita ce ta kafa kuma shugabar Mata a Physics a Afirka ta Kudu (WiPiSA).

Ilimi

Mmantsae Diale ta sami digiri na farko a fannin Kimiyya a fannin Ilimi (Fisika da Lissafi) daga Jami'ar Arewa maso Yamma (Mafikeng), Jagoran Kimiyya a Kimiyya daga Jami'an Kiwon Lafiya na Kudancin Afirka (SMU) da BSc Honours a fannin Fisika a Jami'ar Sefako Makgatho da ke Pretoria . Ta yi karatu don digiri na PhD a Jami'ar Pretoria .

Kyaututtuka

A cikin 2018, an ba Diale lambar yabo ta Cibiyar Kimiyya da Fasaha ta Kasa (NSTF) don Ci gaban Ikon Binciken Injiniya saboda tasirin da ta yi a kan gina ƙarfin STEM a Afirka ta Kudu. A shekara ta 2023, an zabe ta Fellow na Kwalejin Kimiyya ta Afirka, ta amince da gudummawar da ta bayar ga binciken kimiyya da ci gaba a nahiyar.

Littattafan da aka zaɓa

|last2=Meyer |first2=W.E. |last3=Auret |first3=F.D. |last4=Paradzah |first4=A.T. |last5=Diale |first5=M. |last6=Coelho |first6=S.M.M. |last7=Janse van Rensburg |first7=P.J. |date=2015 |title=The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes |url=https://repository.up.ac.za/bitstream/2263/50010/1/Omotoso_Influence_2015.pdf |journal=Materials Science in Semiconductor Processing |volume=39 |pages=112–118 |doi=10.1016/j.mssp.2015.04.031 |access-date=2025-08-29 |doi-access=free}}

• Rosenberg, John W.; Legodi, Matshisa J.; Rakita, Yevgeny; Cahen, David; Diale, Mmantsae (2017-10-14). "Laplace current deep level transient spectroscopy measurements of defect states in methylammonium lead bromide single crystals" (PDF). Journal of Applied Physics. 122 (14). doi:10.1063/1.4995970. ISSN 0021-8979. Retrieved 2025-08-29.
• Mayimele, M A; van Rensburg, J P. Janse; Auret, F D; Diale, M (2016). "Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes" (PDF). Physica B: Condensed Matter. 480: 58–62. doi:10.1016/j.physb.2015.07.034. Retrieved 2025-08-29.
• Mayimele, Meehleketo A.; Diale, Mmantsae; Mtangi, Wilbert; Auret, Francois D. (2015). "Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant" (PDF). Materials Science in Semiconductor Processing. 34: 359–364. doi:10.1016/j.mssp.2015.02.018. Retrieved 2025-08-29.
• Mtangi, W.; Auret, F.D.; Nyamhere, C.; Janse van Rensburg, P.J.; Chawanda, A.; Diale, M.; Nel, J.M.; Meyer, W.E. (2009). "The dependence of barrier height on temperature for Pd Schottky contacts on ZnO" (PDF). Physica B: Condensed Matter. 404 (22): 4402–4405. doi:10.1016/j.physb.2009.09.022. Retrieved 2025-08-29.
• Mwankemwa, Benard S.; Nambala, Fred J.; Kyeyune, Farooq; Hlatshwayo, Thulani T.; Nel, Jackie M.; Diale, Mmantsae (2017). "Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods" (PDF). Materials Science in Semiconductor Processing. 71: 209–216. doi:10.1016/j.mssp.2017.08.005. Retrieved 2025-08-29.